IndiumV3, Main, Repository, bibRecord, 000502

Stability of InP oxide versus solvated electrons in liquid ammonia

Identifieur interne : 000502 ( Main/Repository ); précédent : 000501; suivant : 000503

Stability of InP oxide versus solvated electrons in liquid ammonia

Auteurs : RBID : Pascal:13-0209596

Descripteurs français

Pascal (Inist)
- Stabilité, Oxyde, Liquide, Ammoniac, Solvant non aqueux, Semiconducteur, Interface, Electron solvaté, Phosphure d'indium, InP.
Wicri :
- concept : Oxyde.

English descriptors

KwdEn :
- Ammonia, Indium phosphide, Interface, Liquid, Non aqueous solvent, Oxides, Semiconductor materials, Solvated electron, Stability.

Abstract

In alkaline aqueous medium (pH 9), potassium ferricyanide was used as an oxidizing agent on InP. This electroless process was successfully controlled by capacity measurements, AFM and XPS analyses. For the first time, the chemical stability of the oxide has been studied against the strongest reducing agent in liquid ammonia (-50°C): the solvated electron. It was obtained in two ways; an electroless process which involved the addition of metallic potassium and by cathodic galvanostatic treatment on InP in neutral medium. As a first result, the electroless process required a strong rinsing step of the surface by pure liquid ammonia. As a second result, the galvanostatic process gave also promising results. A significant decrease of the amount of oxide was evidenced by capacity measurements, AFM and XPS analyses.

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Pascal:13-0209596

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Stability of InP oxide versus solvated electrons in liquid ammonia</title>
<author><name sortKey="Goncalves, A M" uniqKey="Goncalves A">A.-M. Goncalves</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Simon, N" uniqKey="Simon N">N. Simon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Channoug, S" uniqKey="Channoug S">S. Channoug</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Aureau, D" uniqKey="Aureau D">D. Aureau</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Mathieu, C" uniqKey="Mathieu C">C. Mathieu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Etcheberry, A" uniqKey="Etcheberry A">A. Etcheberry</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Île-de-France</region>
<settlement type="city">Versailles</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0209596</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0209596 INIST</idno>
<idno type="RBID">Pascal:13-0209596</idno>
<idno type="wicri:Area/Main/Corpus">000C21</idno>
<idno type="wicri:Area/Main/Repository">000502</idno>
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<seriesStmt><idno type="ISSN">1631-0748</idno>
<title level="j" type="abbreviated">C. r., Chim.</title>
<title level="j" type="main">Comptes rendus. Chimie</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ammonia</term>
<term>Indium phosphide</term>
<term>Interface</term>
<term>Liquid</term>
<term>Non aqueous solvent</term>
<term>Oxides</term>
<term>Semiconductor materials</term>
<term>Solvated electron</term>
<term>Stability</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Stabilité</term>
<term>Oxyde</term>
<term>Liquide</term>
<term>Ammoniac</term>
<term>Solvant non aqueux</term>
<term>Semiconducteur</term>
<term>Interface</term>
<term>Electron solvaté</term>
<term>Phosphure d'indium</term>
<term>InP</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Oxyde</term>
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<front><div type="abstract" xml:lang="en">In alkaline aqueous medium (pH 9), potassium ferricyanide was used as an oxidizing agent on InP. This electroless process was successfully controlled by capacity measurements, AFM and XPS analyses. For the first time, the chemical stability of the oxide has been studied against the strongest reducing agent in liquid ammonia (-50°C): the solvated electron. It was obtained in two ways; an electroless process which involved the addition of metallic potassium and by cathodic galvanostatic treatment on InP in neutral medium. As a first result, the electroless process required a strong rinsing step of the surface by pure liquid ammonia. As a second result, the galvanostatic process gave also promising results. A significant decrease of the amount of oxide was evidenced by capacity measurements, AFM and XPS analyses.</div>
</front>
</TEI>
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<fA06><s2>1</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Stability of InP oxide versus solvated electrons in liquid ammonia</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Electrochemistry and naotechnologies: The new challenges</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>GONCALVES (A.-M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SIMON (N.)</s1>
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<fA11 i1="03" i2="1"><s1>CHANNOUG (S.)</s1>
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<fA11 i1="04" i2="1"><s1>AUREAU (D.)</s1>
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<fA11 i1="05" i2="1"><s1>MATHIEU (C.)</s1>
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<fA11 i1="06" i2="1"><s1>ETCHEBERRY (A.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>DJENIZIAN (Thierry)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>HANBÜCKEN (Margrit)</s1>
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<s9>ed.</s9>
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<fA14 i1="01"><s1>Institut Lavoisier (ILV), CNRS UMR 8180, Versailles University</s1>
<s2>Versailles</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<s3>FRA</s3>
<sZ>1 aut.</sZ>
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<fA15 i1="02"><s1>Competency Center for Nanosciences et Nanotechnologies Provence-Alpes-Côte-d'Azur, GDR CNRS 3196</s1>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA15 i1="03"><s1>Center for Interdisciplinary Nanoscience of Marseille UMR CNRS 7325, Aix-Marseille University</s1>
<s2>Marseille</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA15 i1="04"><s1>Chair for Microstructured Materials, Martin-Luther University</s1>
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<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA15 i1="05"><s1>Lavoisier Institute of Versailles, UMR CNRS 8180, University of Versailles-Saint-Quentin</s1>
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<s3>FRA</s3>
<sZ>5 aut.</sZ>
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<fA15 i1="06"><s1>Fraunhofer Institute for Mechanics of Materials</s1>
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<fA20><s1>34-38</s1>
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<fA21><s1>2013</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>116BC1B</s2>
<s5>354000182598050060</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0209596</s0>
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<fA60><s1>P</s1>
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<fA66 i1="01"><s0>FRA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In alkaline aqueous medium (pH 9), potassium ferricyanide was used as an oxidizing agent on InP. This electroless process was successfully controlled by capacity measurements, AFM and XPS analyses. For the first time, the chemical stability of the oxide has been studied against the strongest reducing agent in liquid ammonia (-50°C): the solvated electron. It was obtained in two ways; an electroless process which involved the addition of metallic potassium and by cathodic galvanostatic treatment on InP in neutral medium. As a first result, the electroless process required a strong rinsing step of the surface by pure liquid ammonia. As a second result, the galvanostatic process gave also promising results. A significant decrease of the amount of oxide was evidenced by capacity measurements, AFM and XPS analyses.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001C01I</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001C01F03</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Stabilité</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Stability</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estabilidad</s0>
<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Oxyde</s0>
<s2>NA</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Oxides</s0>
<s2>NA</s2>
<s5>02</s5>
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<s2>NA</s2>
<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Liquide</s0>
<s5>03</s5>
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<s5>03</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Líquido</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Ammoniac</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Ammonia</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Amoníaco</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Solvant non aqueux</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Non aqueous solvent</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Disolvente no acuoso</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Interface</s0>
<s5>07</s5>
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<fC03 i1="07" i2="X" l="ENG"><s0>Interface</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Interfase</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Electron solvaté</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Solvated electron</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Electrón solvatado</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fN21><s1>196</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Stability of InP oxide versus solvated electrons in liquid ammonia

Stability of InP oxide versus solvated electrons in liquid ammonia

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri